摘要
Stress-induced mechanism and related manifold characteristics from lattice mismatch and harsh self-heating effect (SHE) substantially interact are major concerns of advanced strained Ge p-FinFETs with inherent poor thermal conductivity. This study presents a process-oriented simulation methodology to investigate the comprehensive influences composed of the stress amplitude and performance variations induced by SHE and lattice stresses. Device performance can be separately improving by 15.98% and 31.20% when lattice strain and subsequent SHE are introduced. In conclusion, the effect of SHE on the performance of advanced p-FinFET is explored and found tantamount to the stress contribution of the lattice mismatch.