Abstract
The design and characteristics of a junctionless (JL) bulk FinFET were compared with the silicon-on-insulator (SOI) JL nanowire transistor (JNT) using 3-D quantum transport device simulation. The JL bulk FinFET exhibits a favorable on/offcurrent ratio and short-channel characteristics by reducing the effective channel thickness that is caused by the channel/substrate junction. The drain-induced barrier lowering and the subthreshold slope are about 40 mV and 73 mV/dec, respectively, with an on/offcurrent ratio of 10 5 at W = 10 nm. The JL bulk FinFET is less sensitive to the channel thickness than the SOI JNT. Furthermore, the threshold voltage V th of the JL bulk FinFET can be easily tuned by varying substrate doping concentration N sub . The modulation range of V th as N sub changes from 10 18 to 10 19 cm -3 , which is around 30%. © 1980-2012 IEEE.