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Performance of stacked nanosheets gate-all-around and multi-gate thin-film-transistors
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Performance of stacked nanosheets gate-all-around and multi-gate thin-film-transistors

Yu-Ru Lin, Yi-Yun Yang, Yu-Hsien Lin, Erry Dwi Kurniawan, Mu-Shih Yeh, Lun-Chun Chen 和 Yung-Chun Wu
IEEE Journal of the Electron Devices Society, 卷.6, 頁碼.1187-1191
2018
DOI: https://doi.org/10.1109/JEDS.2018.2873008

摘要

gate-all-around (GAA) Nanosheet (NS) stacked structure Thin-film transistor (TFT) Biotechnology Electronic Optical and Magnetic Materials Electrical and Electronic Engineering
This comprehensive study of the horizontally p-type stacked nanosheets inversion mode thinfilm transistor with gate-all-around (SNS-GAATFT) and multi-gate (SNS-TFT) structures. The stacked nanosheets device structure, fabrication, and electrical characteristics are analyzed. The SNS-GAATFT reveals better performance to multi-gate SNS-TFT. The proposed inversion mode SNS-TFT has properties of the easy process with low cost and compatible with all 3-D Si CMOS and AMOLED applications. Moreover, the SNS-GAATFT is suitable for future monolithic 3-D IC for 2015's ITRS technology roadmap for the year 2024-2030.

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