摘要
The phase formation and the morphological stability of ∈1-Cu 3 Ge and ∈1-Cu 3 (Si 1 - x Ge x ) in Cu/ epitaxial-Ge(e-Ge)/(111)Ge, Cu/(001)Ge, Cu/e-Ge/(111)Si, and Cu/(001)Si-Ge alloys have been investigated by transmission electron microscopy in conjunction with the energy dispersive spectrometry as well as by sheet resistance measurement. Epitaxial Cu and epitaxial ζ-Cu 5 Ge were found to form in as-deposited Cu/e-Ge/(111)Ge and Cu/e-Ge/(111)Si. On the other hand, textured Cu was found to form in the other systems. Polycrystalline ∈1-Cu 3 Ge and ∈-Cu 3 (Si 1 - x Ge x ) were the only phases formed in 150-500°C annealed Cu/Ge and (Cu/e-Ge/Si and Cu/Si-Ge alloys) systems, respectively. They were found to agglomerate at 550°C. The room-temperature oxidation of substrate in the presence of Cu 3 (Si 1 - x Ge x ) was found only in the Cu/Si 0.7 Ge 0.3 system. From the sheet resistance measurement, ∈1-Cu 3 Ge has the lowest resistivity of 7 μΩcm after 400°C annealing. The electrical resistivity was found to decrease with the Ge content. © 2000 American Institute of Physics.