摘要
3n this work the interface between transition metals (Fe, Co) and Si has been investigated by soft X-ray photoemission spectroscopy. Synchrotron radiation has been used as photon source, measuring valence bands. Si 2p and metal 3p core levels with high surface sensitivity. CoSi <sub>2</sub> and β-FeSi <sub>2</sub> chemical phases have been obtained by thermal annealing (500-800°C) of thin films deposited onto room temperature Si<111 > and <100 > oriented wafers. Moreover, for the first time to our knowledge, a mixed (Fe <sub>0.785</sub> Co <sub>0.25</sub> )/Si multilayered interface has been studied, showing remarkable difference with respect to single-metal deposition. © 1992.