Photoemission studies of Silicon chemisorption on Al(110)

Y. Chang; J.C. Hansen; F. Zanini; Y. Hwu; G. Margaritondo

doi:10.1016/0039-6028(89)90823-6

Photoemission studies of Silicon chemisorption on Al(110)

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Photoemission studies of Silicon chemisorption on Al(110)

Y. Chang, J.C. Hansen, F. Zanini, Y. Hwu 和 G. Margaritondo

Surface Science, 卷.211-212(C), 頁碼.637-640

04/1989

DOI: https://doi.org/10.1016/0039-6028(89)90823-6

摘要

Condensed Matter Physics

Surfaces and Interfaces

Surfaces

Coatings and Films

Materials Chemistry

We present the results of one of the few studies of chemisorption of a semiconductor overlayer on a metal substrate, performed for Si on Al(110). The results suggest that simple models cannot provide an unified picture of semiconductor interfaces. © 1989.

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題名: Photoemission studies of Silicon chemisorption on Al(110)
翻譯題名: Photoemission studies of Silicon chemisorption on Al(110)
創作者：: Y. Chang (作者) - University of Wisconsin–Madison
J.C. Hansen (作者) - University of Wisconsin–Madison
F. Zanini (作者) - University of Wisconsin–Madison
Y. Hwu (作者) - University of Wisconsin–Madison
G. Margaritondo (作者) - University of Wisconsin–Madison
學術資源類型: 期刊文章
出版日期: 04/1989
出版資訊: Surface Science, 卷.211-212(C), 頁碼.637-640
語言: 英語

Photoemission studies of Silicon chemisorption on Al(110)

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