摘要
The multilayer HfSe 2 on sapphire is first fabricated by the ion beam-assisted process combining ion implantation with the post annealing. The A 1g mode of HfSe 2 is shown in the Raman spectrum, the X-ray photoelectron spectroscopy results indicate the existence of Hf–Se bonding, and the transmission electron microscopy analysis exactly identifies the crystal structure of HfSe 2 . The six-layered (6L) octahedral HfSe 2 (1T-HfSe 2 ), whose band structure is well realized by utilizing photoluminescence spectroscopy compared with the results of the density functional theory calculation, is formed via the Hf selenization during annealing.