Abstract
Photoluminescence studies were performed to evaluate the results of rapid thermal annealing of nitrogen-implanted In 0.32 Ga 0.68 P layers, which were grown on GaAs 0.61 P 0.39 substrates by a supercooling liquid-phase-epitaxial method. When the annealing temperature used is between 600 and 840°C with 30 s duration, the N isoelectronic trap can be activated with an activation energy of 0.48 eV which is necessary to place N atoms into P sites. The 9 K photoluminescence spectrum is dominated by the sharp near-band-gap peak E g Γ and the broad N-related band N x . The N level is located ∼110 meV below the Γ-band minimum for the In 0.32 Ga 0.68 P alloy. By selecting different annealing temperatures and times, the optimum annealing condition to obtain the strongest emission intensity of the band N x is at T=800°C and 30 s duration.