Photon-driven magnetization switching in Fe₃GeTe₂ enables programmable, multilevel magnetic memory

期刊文章

同儕審查

Wei-Qing Li, Sheng-Hsiung Hung, Jia-Xin Li, Chung-Chun Lu, Po-Liang Chen, Ching Kuo, Kun-Hung Pan, Horng-Tay Jeng 和 Chang-Hua Liu

Nature communications

02/09/2026

檔案與連結 (1)

url

https://doi.org/10.1038/s41467-026-77178-9檢視

已出版(紀錄版本) 開放

1 檢視次數

題名: Photon-driven magnetization switching in Fe₃GeTe₂ enables programmable, multilevel magnetic memory
創作者：: Wei-Qing Li - National Tsing Hua University
Sheng-Hsiung Hung - National Tsing Hua University
Jia-Xin Li - National Tsing Hua University
Chung-Chun Lu - National Tsing Hua University
Po-Liang Chen
Ching Kuo - National Tsing Hua University
Kun-Hung Pan - National Tsing Hua University
Horng-Tay Jeng
Chang-Hua Liu
學術資源類型: 期刊文章
出版日期: 02/09/2026
出版資訊: Nature communications
語言: 英語