摘要
Flexible and self-powered deep ultraviolet (UV) photodetectors are pivotal for next-generation electronic skins to enrich human life quality. The fabrication of epitaxial β-Ga 2 O 3 thin films is challenging on flexible substrates due to high-temperature growth requirements. Herein, β-Ga 2 O 3 (2 - 0 1) films are hetero-epitaxially grown on ultra-thin and environment-friendly muscovite mica which is the first time β-Ga 2 O 3 epitaxy growth on any flexible substrate. Integration of Gallium oxide with muscovite enables high-temperature processing as well as excellent flexibility compared to polymer substrates. Additionally, the metal–semiconductor-metal (MSM) photodetector on β-Ga 2 O 3 layer shows an ultra-low dark current of 800 fA at zero bias. The photovoltaic peak responsivity of 11.6 µA/W is obtained corresponding to very weak illumination of 75 μW/cm 2 of 265 nm wavelength. Thermally stimulated current (TSC) measurements are employed to investigate the optically active trap states. Among these traps, trap with an activation energy of 166 meV dominates the persistence photocurrent in the devices. Finally, photovoltaic detectors have shown excellent photocurrent stability under bending induced stress up to 0.32%. Hence, this novel heteroepitaxy opens the new way for flexible deep UV photodetectors.