Abstract
The physical and reliability characteristics of a metal-oxide-semiconductor (MOS) device with gate hafnium oxynitride (HfO x N y ) deposited on (100)- and (111)-surface-oriented substrates were investigated. The X-ray photoelectron spectroscopy (XPS) results show that the oxygen 1s peak for the (111) substrate samples is lower than that for the (100) samples while the nitrogen Is peak is higher for the former. Crystalline retardation for the HfO x N y film deposited onto the (111) substrate was characterized by X-ray diffraction (XRD) measurement. Devices with a HfO x N y , film deposited on a (111) substrate exhibit better reliability characteristics, such as smaller stress-induced leakage current (SILC) and larger time to breakdown (T bd ) than those with the same film deposited on a (100) substrate.