Abstract
Specular CdTe epitaxial layers have been grown on (100)Si substrates by low pressure metalorganic chemical vapour deposition method with dimethylcadmium (DMCd) and diethyltelluride (DETe) source materials. Scanning electron microscopy is used to demonstrate the good surface morphology. Hall measurements show that all grown CdTe crystals are n-type with carrier concentrations of about 6×10 17 cm -3 and mobilities in the range of 500-700 cm 2 /V·s at room temperature. Deep level transient spectroscopy has been used to study the defect levels existing in the interface of the heterojunction, and four levels E c -0.25, 0.34, 0.44 and 0.76 eV are investigated. 14 K photoluminescence spectra show dominant sharp bound exciton related emission peak at 1.593 eV and the weak defect related extrinsic band at 1.483 eV. The intensity of 1.483 eV is enhanced with the increase of the DMCd/DETe mole ratio and the V Te -related or Cd i -related complexes are tentatively suggested for this emission band. All results indicated that the high quality CdTe epitaxial layers can be grown on (100) Si. © 1986.