Abstract
Protection devices for future lowvoltage electronics are needed. Performances of a iiewpunchthrough transient voltage suppressor, TVS. are analyzed with twodimensional device simulation. Compared with available lowvoltage TVS constructed by Zener diode, the punchthrough diode shows for superior leakage current and capacitance. These punchthrough TVS are satisfactory for applications not only at 3 V but even at 1 V. © 1996 IEEE.