摘要
Interfacial reactions of Y and Er thin films on both (111)Si and (001)Si have been studied by transmission electron microscopy (TEM). Epitaxial rare-earth (RE) silicide films were grown on (111)Si. Planar defects, identified to be stacking faults on {101̄0} planes with 1/6<1̄21̄3> displacement vectors, were formed as a result of the coalescence of epitaxial silicide islands. Double-domain epitaxy was found to form in RE silicides on (001)Si samples resulting from a large lattice mismatch along one direction and symmetry conditions at the silicide/(001)Si interfaces. The orientation relationships are [0001]RESi <sub>2-x</sub> // [11̄0]Si, (11̄00)RESi <sub>2-x</sub> //(001)Si and [0001]RESi <sub>2-x</sub> /[1̄1̄0]Si, (11̄00)RESi <sub>2-x</sub> //(001) Si. The density of staking faults in (111) samples and the domain size in (001) samples were found to decrease and increase with annealing temperature, respectively.