摘要
A high density of planar defects was found by transmission electron microscopy in DySi 2-x thin films. The planar defects were analyzed to be stacking faults of shear type on {0001} planes with 1/6〈12̄13〉 displacement vectors. The density of stacking faults was observed to decrease with annealing temperature and time. The accommodation of misfit between coalescing islands is suggested as the origin for the formation of stacking faults in epitaxial DySi 2-x films on (111)Si.