Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing

期刊文章

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J. B Friedmann, J. L Shohet, R Mau, N Hershkowitz, S Bisgaard, S MA 和 J. P Mcvittie

IEEE transactions on semiconductor manufacturing, 卷.10(1), 頁碼.154-166

01/02/1997

Web of Science ID: WOS:A1997WG84200016

摘要

Applied sciences

Electronics

Exact sciences and technology

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

1 檢視次數

題名: Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing
創作者：: J. B Friedmann - Texas Instruments (United States)
J. L Shohet - University of Wisconsin–Madison
R Mau - University of Wisconsin–Madison
N Hershkowitz - University of Wisconsin–Madison
S Bisgaard - University of Wisconsin–Madison
S MA - Stanford SystemX Alliance
J. P Mcvittie - Stanford SystemX Alliance
出版者: Institute of Electrical and Electronics Engineers
總頁數: 13
學術資源類型: 期刊文章
出版日期: 01/02/1997
出版資訊: IEEE transactions on semiconductor manufacturing, 卷.10(1), 頁碼.154-166
語言: 英語