Two-dimensional (2D) materials have emerged as one of most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi2O2Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, the fabrication of p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures ( 600 K, compatible with back-end-of-line processes) of pulsed laser deposited BOSe thin films, enabling the modulation of their carrier polarity via the introduction of Zn2+ substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of 106 and planar transistors based on p-doped BOSe homojunctions. Our results help promoting the application of this material system towards the development of the next-generation electronics. Bi2O2Se is a promising 2D semiconductor with high electron mobility and native high-k dielectric layers, but its p-type doping remains challenging. Here, the authors report a low-temperature substitutional doping method to fabricate 2D Bi2O2Se p-n junctions and p-type transistors
- Polarity modulation in compositionally tunable Bi2O2Se thin films
- Yong-Jyun Wang - National Tsing Hua UniversityJian-Wei Zhang - East China Normal UniversityJianchu Chen - East China Normal UniversityHaonan Wang - East China Normal UniversityShiuan Wu - Hsinchu, 300044 TaiwanChang-Yu Lo - Hsinchu, 300093 TaiwanJhe-Ting Hong - Hsinchu, 300044 TaiwanCheng-Yang Syu - National Tsing Hua UniversityLi-Syuan Hao - National Tsing Hua UniversityI-Sung Chen - National Tsing Hua UniversityYuan-Chih Chang - National Tsing Hua University, Department of Electrical EngineeringZhenzhong Yang - East China Normal UniversityRong Huang - Advanced Materials and Devices (United States)Chun-Liang Lin - Hsinchu, 300093 TaiwanPo-Wen Chiu - National Tsing Hua University, College of Semiconductor ResearchYu-Lun Chueh - National Tsing Hua University, College of Semiconductor ResearchYi-Cheng Chen - National Tsing Hua University, School of MedicineChao-Hui Yeh - National Tsing Hua University, College of Semiconductor ResearchYing-Hao Chu - National Tsing Hua University, College of Semiconductor Research
- Nature Publishing Group UK
- Journal article
- 24/03/2025
- Nature communications, Vol.16(1), 2873
- English