Abstract
The Mueller matrices of light scattering by the thin film edge of a SiO x film on a silicon substrate were experimentally determined. The method for Mueller matrix measurement is discussed in detail. The normalized matrix elements S 12 * and S 34 * were found to be most sensitive to edge height variation at the scatter angle close to the specular direction. An experimental means for determination of edge height, i.e. film thickness, using this phenomenon is proposed. The error, sensitivity and precision of the proposed method are discussed.