Abstract
A soluble organic material, polyacrylonitrile (PAN), was investigated for its feasibility of gate dielectric applications. The solution-processed PAN was spin coated in air. Results show that leakage current density as low as 0.3 nA cm2 for 50 nm PAN dielectrics could be achieved via process optimization. Functional transistor characteristics were achieved in air for the implementation of PAN in organic thin-film transistors using pentacene or poly(3-hexylthiophene) as a semiconductor material. © 2007 American Institute of Physics.