Abstract
Polyhedral oligomeric silsesquioxane (POSS) nanocomposite, which is prepared from two liquid monomers and can be processed under the "spinning on" process, exhibits an ultra-low dielectric constant (k) of 1.47. The ultra-low k value of the POSS nanocomposite material is attributed to the formation of a POSS lamellar structure. The nanocomposite material also shows good thermal stability, high glass transition temperature, and re-workable characteristics, warranting its high potential for uses in modern and future microelectronics. © 2009 The Royal Society of Chemistry.