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Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal
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Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal

Raman Sankar, G. Narsinga Rao, I. Panneer Muthuselvam, Christopher Butler, Nitesh Kumar, G. Senthil Murugan, Chandra Shekhar, Tay-Rong Chang, Cheng-Yen Wen, Chun-Wei Chen, …
Chemistry of Materials, 卷.29(2), 頁碼.699-707
01/2017

摘要

Chemistry (all) Chemical Engineering (all) Materials Chemistry
Large size (∼2 cm) single crystals of layered MoTe 2 in both 2H- and 1T′-types were synthsized using TeBr 4 as the source of Br 2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ(T), magnetic susceptibility χ(T), and heat capacity C p (T) measurement results reveal a first order structural phase transition near ∼240 K for 1T′-MoTe 2 , which has been identified to be the orthorhombic Td-phase of MoTe 2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H- and Td-types of MoTe 6 units in trigonal prismatic and distorted octahedral coordination, respectively.

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