摘要
This study examined the influence of post-annealing temperature on blister formation and growth in ion-implanted H in Si 〈1 0 0〉. Ion energy levels of 40 and 100 keV and fluences of 2 × 10 16 and 5 × 10 16 cm -2 were investigated. Post-annealing treatments were performed using the furnace annealing (FA) method with temperatures ranging from 200 to 600 °C for a duration of 1 h. Raman scattering spectroscopy (RSS), optical microscopy (OM), secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (XTEM) were employed to explore the mechanisms behind the smart cut technique. The results revealed that variations among the transformation of the VH 3 (or V 2 H 6 ) defect complex phase into the Si(1 0 0):H bonding configuration phase (RSS results), the appearance of optically detectable blisters and craters (OM results), the average depth of craters (AFM results), the trapping of hydrogen atoms and gettering of oxygen atoms (SIMS results), and the damaged microstructures (XTEM results) against post-annealing temperature were in close correspondence. It was also found that the optimal post-annealing temperature for blister formation and growth was 550 °C. © 2007.