Precise temperature control for growth of silicon crystals

S. P. Lee; J. T. Lue; Y. T. Yang; H. Y. Yu

doi:10.1063/1.1134495

Precise temperature control for growth of silicon crystals

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Precise temperature control for growth of silicon crystals

S. P. Lee, J. T. Lue, Y. T. Yang 和 H. Y. Yu

Review of Scientific Instruments, 卷.47(1), 頁碼.72-73

28/08/2008

DOI: https://doi.org/10.1063/1.1134495

摘要

silicon

An automatic temperature controller for a three‐phase, grid-controlled induction furnace, which can maintain the oven temperature at the silicon melting point with a stability of ±0.4 °C for 2h of operation, has been described.

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題名: Precise temperature control for growth of silicon crystals
創作者：: S. P. Lee (作者) - National Tsing Hua University
J. T. Lue (作者) - National Tsing Hua University
Y. T. Yang (作者)
H. Y. Yu (作者) - National Tsing Hua University
學術資源類型: 期刊文章
出版日期: 28/08/2008
出版資訊: Review of Scientific Instruments, 卷.47(1), 頁碼.72-73
語言: 英語

Precise temperature control for growth of silicon crystals

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