- 題名
- Prediction of plasma charging induced gate oxide damage by plasma charging probe
- 創作者：
- Shawming Ma - Stanford SystemX AllianceJames P. McVittie - Stanford SystemX AllianceKrishna C. Saraswat - Stanford SystemX Alliance
- 總頁數
- 3
- 補助款備註
- Semiconductor Research Corporation (http://data.elsevier.com/vocabulary/SciValFunders/100000028) Advanced Research Projects Agency (http://data.elsevier.com/vocabulary/SciValFunders/100009224)
- 學術資源類型
- 期刊文章
- 出版日期
- 01/10/1997
- 出版資訊
- IEEE electron device letters, 卷.18(10), 頁碼.468-470
- 語言
- 英語
期刊文章
Prediction of plasma charging induced gate oxide damage by plasma charging probe
IEEE electron device letters, 卷.18(10), 頁碼.468-470
01/10/1997
Web of Science ID: WOS:A1997XX23700002
指標
1 檢視次數