Abstract
A Tris-chelated diselenophosphato complex of bismuth, Bi[Se 2 P(OiPr) 2 ] 3 , was successfully prepared and used to obtain two separate, uniform deposits of nanostructured metal phosphate, BiPO 4 , and metal chalcogenide, Bi 2 Se 3 , in a one-step metal-organic chemical vapor deposition process. This work expands the applications of single-source precursors in a new dimension by producing two separate, uniform products from decomposition of a single-source precursor in one step. The inclusion of oxygen and phosphorus elements in the precursor molecule makes possible the simultaneous production of BiPO 4 nanowires and Bi 2 Se 3 nanoplates from the single-source precursor. The resulting BiPO 4 nanowires and Bi 2 Se 3 nanoplates show promising field emission properties, comparable to the more popular oxide semiconductor nanowires. The Bi 2 Se 3 nanoplates also exhibit a superior thermoelectric property over bulk Bi 2 Se 3 . © 2007 American Chemical Society.