Abstract
Hg 1-x Cd x Te epitaxial layers were grown on CdTe substrates by the liquid-phase-epitaxy method in a horizontal open system. A semiclosed rotational boat was developed to prevent Hg loss from the Te-rich growth melt during growth processes. The solid composition of HgTe-rich Hg 1-x Cd x Te layers can be reproducibly controlled. Through the rotation mechanism, the melt entrapment on the as-grown surface can be avoided. With a small amount of excess Hg added into the growth melt and in situ annealing at 300 °C right after the growth, an n-type epilayer can be obtained. The electron concentration of 3×10 15 cm -3 and the electron mobility of 7.5×10 4 cm 2 /V s were obtained.