Abstract
Materials characteristics and ferroelectric properties of thick xPb(Ni <sub>1/3</sub> Nb <sub>2/3</sub> )O <sub>3</sub> -(1-x) Pb(Zr <sub>0.52</sub> Ti <sub>0.48</sub> )O <sub>3</sub> (x=0.3), PNN-PZT films, which were prepared by doctor-blade tape-casting and laser lift-off processes, were investigated. The underlying buffer materials were observed to influence significantly the densification behavior for the PNN-PZT sapphire layers. For PNN-PZT/sapphire films sintered without buffer layer, the substrates impose pronounced constraint on materials shrinkage, inducing the formation of porosity for the PNN-PZT layers. The proportion of pores is pronouncedly reduced when using a Pb(Zr <sub>0.52</sub> Ti <sub>0.48</sub> )O <sub>3</sub> thin layer (<0.3 μm) prepared by metal-organic decomposition process as buffer layer. The PNN-PZT films transferred to silicon substrates by laser lift-off processes exhibit large electrical polarization characteristics (Pr=41.9 μC/cm <sup>2</sup> ), with small coercive field (Ec=35.6 kV/cm). © 2003 Elsevier Ltd. All rights reserved.