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Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering
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Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering

Hsin-Yi Lee, C.-H. Hsu, Y.-W. Hsieh, Yen-Hua Chenb, Tai-Bor WuL. J. Chou
Materials Chemistry and Physics, 卷.92(2-3), 頁碼.585-590
15/08/2005

摘要

Artificial superlattices;X-ray scattering;Grazing-incidence X-ray diffraction;RF magnetron sputtering;Dielectric constant

High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (STO) substrates with RF-magnetron sputtering deposition at substrate temperatures in a range 150–650 °C. Azimuthal scans around the surface Bragg peak of the film and lattice images from a high-resolution transmission electron microscope (HRTEM) show that a well epitaxial relationship between film and substrate is achievable through RF sputtering growth. BaTiO3/SrTiO3 (BTO/STO) artificial superlattices subsequently deposited on LNO-coated STO substrates with RF sputtering were found also to have a large dielectric constant and a small dissipation factor.

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