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Process-induced influences on epoxy-based encapsulated reliability of high power modules
期刊文章

Process-induced influences on epoxy-based encapsulated reliability of high power modules

C.-C. Lee, M.-T. Chen 和 J.-C. Chuang
International Journal of Mechanical Sciences, 卷.297-298
2025
Web of Science ID: WOS:001499357500001

摘要

Epoxy-based encapsulated reliability Finite element analysis High power modules Process effect Thermal cycling test Layered manufacturing Epoxy Epoxy-based Epoxy-based encapsulated reliability Finite element analyse High power module Insulated metal substrates Module-based Process effects Thermal cycling test Warpages Insulated gate bipolar transistors (IGBT)
This study focuses on a high-power module based on an insulated metal substrate (IMS) and an insulated gate bipolar transistor. Furthermore, this research aims to propose a process-oriented methodology of finite element simulation to describe the warpage behavior induced by the manufacturing of a high-power module with a thin IMS. Experimental data on the material properties of epoxy drive investigations into its influence on high-power modules on warpage in this study. The curing effect of thermosetting and the viscoelastic properties of epoxy are analyzed through the simulation integrated with isothermal and two-domain modified Tait models. The accuracy of the proposed methodology is validated through warpage measurements during each of the manufacturing processes, namely, assembly, reflow, housing, and curing. Moreover, this study conducts inspections to observe failure behaviors after thermal cycling tests (TCT) on the power module. Variations in the accumulated plastic strain energy density of the solder component under different thermal cycling loads through process-oriented simulation are examined, with and without consideration of the process effects. Subsequently, the ramp rate and dwell time of TCT are analyzed to determine the most influential design parameter. © 2025 Elsevier Ltd

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-105005767491&doi=10.1016%2fj.ijmecsci.2025.110394&partnerID=40&md5=a3e12b29eb1e5df00c53747f0056ab40檢視

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