Pseudopotential calculation of the stacking fault energy in silicon

L.J. Chen; L.M. Falicov

doi:10.1080/14786437408213549

期刊文章

Pseudopotential calculation of the stacking fault energy in silicon

L.J. Chen 和 L.M. Falicov

Philosophical Magazine, 卷.29(1), 頁.8

1974

DOI: https://doi.org/10.1080/14786437408213549

摘要

Engineering (all)

Physics and Astronomy (all)

A calculation of the intrinsic stacking fault energy in silicon has been carried out to second order perturbation in the pseudopotential formalism. The calculated result is 55 erg/cm ² , which is in remarkably good agreement with the experimental value. © 1974, Taylor & Francis Group, LLC. All rights reserved.

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題名: Pseudopotential calculation of the stacking fault energy in silicon
創作者：: L.J. Chen (作者) - Lawrence Berkeley National Laboratory
L.M. Falicov (作者) - University of California, Berkeley
學術資源類型: 期刊文章
出版日期: 1974
出版資訊: Philosophical Magazine, 卷.29(1), 頁.8
語言: 英語

Pseudopotential calculation of the stacking fault energy in silicon

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