Abstract
Protection devices for future low-voltage electronics are needed. Performances of a new-punchthrough transient voltage suppressor, TVS, are analyzed with two-dimensional device simulation. Compared with available low-voltage TVS constructed by Zener diode, the punchthrough diode shows for superior leakage current and capacitance. These punchthrough TVS are satisfactory for applications not only at 3 V but even at 1 V.