摘要
We quantify the local Seebeck coefficient with scanning thermoelectric microscopy, using a direct approach to convert temperature gradient-induced voltages (V) to Seebeck coefficients (S). We use a quasi-3D conversion matrix that considers both the sample geometry and the temperature profile. For a GaAs p-n junction, the resulting S-profile is consistent with that computed using the free carrier concentration profile. This combined computational-experimental approach is expected to enable nanoscale measurements of S across a wide variety of heterostructure interfaces. © 2013 AIP Publishing LLC.