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Quantitative determination of the oxygen partial pressure effect on the perpendicular magnetization of TbFeCo thin films
Journal article   Peer reviewed

Quantitative determination of the oxygen partial pressure effect on the perpendicular magnetization of TbFeCo thin films

Shiuh Chao, Bin-Yaw Wang, Kon-Li Wu and Der-Ray Huang
Thin Solid Films, Vol.266(2), pp.282-284
01/10/1995

Abstract

Magnetization Oxygen Partial pressure
The oxygen partial pressure during the sputter process of TbFeCo thin films was controlled precisely. The effect of the oxygen partial pressure on the perpendicular magnetization of TbFeCo films was quantitatively studied. Between 5.4 × 10 -6 mbar and 1.29 × 10 -5 mbar oxygen partial pressure, the films lost perpendicular magnetization rapidly and became paramagnetic. Below this range, oxygen had no effect on the perpendicular magnetization of the films. © 1995.

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