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Quantum size effects in low-temperature growth of Pb islands on Si(111)7 × 7 surfaces
Journal article   Peer reviewed

Quantum size effects in low-temperature growth of Pb islands on Si(111)7 × 7 surfaces

Wei-Bin Su, Shih-Hsin Chang, Chia-Seng Chang, Lih Juann Chen and Tien T. Tsong
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol.40(6 B), pp.4299-4303
06/2001

Abstract

Asymmetrical relaxation Critical thickness Electronic growth Magic thickness Quantized states Quantum size effect
Flat-top Pb islands with critical and magic thickness have been observed in the Pb/Si(111)7 × 7 system at 200 K by scanning tunneling microscopy. The growth behavior, different from that in the Stranski-Krastanov mode, arises from a quantum size effect. Quantized states are detected in the current-voltage (I-V) spectra on the Pb islands of varying thickness. Our observation of asymmetrical and oscillatory relaxation in the island thickness reveals that the charge distribution of confined electrons can influence the interlayer spacing. A simple model based on the infinite potential well can explain well all of our results.

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