Abstract
A quasi-Schottky barrier diode made on n-Ga 0.47 In 0.53 As has been demonstrated. This device utilizes a fully depleted ultrathin p + -Ga 0.47 In 0.53 As layer grown by molecular beam epitaxy to increase the barrier height. An increase in the barrier height of 0.27 V, making the total barrier height 0.47 V, has been obtained. A low reverse leakage current and a hysteresis-free capacitance-voltage characteristic suggest that this structure should be useful as a current control gate for high speed field-effect transistors.