Abstract
Radiation damage in C54-TiSi 2 film implanted by 80 keV, 5 × 10 15 cm -2 As + has been studied by both cross-sectional and plan-view transmission electron microscopy as well as by four-point probe resistivity measurements. Phase reversion from C54-TiSi 2 to C49-TiSi 2 was observed in as-implanted samples. The electrical resistivity of implanted samples was found to decrease with annealing temperature and time. Phase transition from C49-TiSi 2 to C54-TiSi 2 and decrease in the density of residual defects were found to correlate with the decrease in electrical resistivity. © 1991.