Abstract
The reaction sequence of the Co/Ni/Si system under an isochromal annealing condition was studied using substrate curvature measurements, TEM, XRD, and AES. The reaction sequence was identified by the abrupt changes of the F/W in the film. The addition of a thin Ni interlayer does not significantly affect the reaction sequence of cobalt silicides. However, the stress in the film during the reaction was reduced. The formation of (Co x Ni 1-x )Si 2 -CoSi 2 structure was observed. The structure exhibited a preferred (400) orientation which is epitaxial to the Si substrate.