Logo image
Real-time variable-resolution complementary metal-oxide-semiconductor field-effect transistors image sensor
Journal article   Peer reviewed

Real-time variable-resolution complementary metal-oxide-semiconductor field-effect transistors image sensor

Chih-Yang Chen, Jian-Jie Wang, Chrong-Jung Lin and Ya-Chin King
Japanese Journal of Applied Physics, Vol.47(4 PART 2), pp.2756-2760
25/04/2008

Abstract

CDS CIS Dynamic range Real time Variable resolution
In this paper, a new, efficient and simple complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) image sensor (CIS) readout architecture providing both real-time variable-resolution image sensing and dynamic range boosting functions is presented. The proposed correlated-double-sampling (CDS) circuit can not only reduce fixed-pattern noise (FPN) but also output the lower resolution image by real-time averaging of four pixels' signals in square 2×2 pixels in variable-resolution mode. Variable-resolution imaging can effectively reduce the complexity of the signal process, release the loading of processing units, and accelerate the data processing in motion detection and object tracking operations. In addition, the new CDS circuit can extend dynamic range of a sensor array by analog combining the signals from different integration lengths. The new designed circuits can replace typical CDS readout circuits in typical CIS arrays to provide real-time, accurate resolution-variable imaging and dynamic range boosting without additional overhead on digital circuits. © 2008 The Japan Society of Applied Physics.

Metrics

1 Record Views

Details

Logo image