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Recent Advances in Compute-in-Memory Support for SRAM Using Monolithic 3-D Integration
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Recent Advances in Compute-in-Memory Support for SRAM Using Monolithic 3-D Integration

Zhixiao Zhang, Xin Si, Srivatsa Srinivasa, Akshay Krishna RamanathanMeng-Fan Chang
IEEE Micro, 卷.39(6), 頁碼.28-37
11/2019

摘要

Software Hardware and Architecture Electrical and Electronic Engineering
Computing-in-memory (CiM) is a popular design alternative to overcome the von Neumann bottleneck and improve the performance of artificial intelligence computing applications. Monolithic three-dimensional (M3D) technology is a promising solution to extend Moore's law through the development of CiM for data-intensive applications. In this article, we first discuss the motivation and challenges associated with two-dimensional CiM designs, and then examine the possibilities presented by emerging M3D technologies. Finally, we review recent advances and trends in the implementation of CiM using M3D technology.

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