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Reduced leakage current and conduction mechanisms of sputtered platinum-doped lead barium zirconate thin films
Journal article   Peer reviewed

Reduced leakage current and conduction mechanisms of sputtered platinum-doped lead barium zirconate thin films

Lin-Jung Wu and Jenn-Ming Wu
Journal of Physics D: Applied Physics, Vol.40(16), pp.4948-4952
21/08/2007

Abstract

The effect of platinum (Pt) on the leakage currents of lead barium zirconate (PBZ) films was studied. The leakage current is reduced by two orders of magnitude by Pt doping. The transport mechanisms of PBZ films are also analysed. The leakage mechanism is found to change from interface-limited conduction to mixed conduction after Pt doping. It is proposed that the internal stresses suppress the leakage current and change the conduction mechanism. The stresses are considered to be caused by lattice distortion due to the presence of Pt inside the PBZ films, which is confirmed by XPS and Raman spectrum. © 2007 IOP Publishing Ltd.

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