摘要
Incorporating dilute doping and controlled synthesis provides a means to modulate the microstructure, defect density, and transport properties. Transmission electron microscopy (TEM) and geometric phase analysis (GPA) have revealed that hot-pressing can increase defect density, which redistributes strain and helps prevent unwanted Ge precipitates formation. An alloy of GeTe with a minute amount of indium added has shown remarkable TE properties compared to its undoped counterpart. Specifically, it achieves a maximum figure-of-merit zT of 1.3 at 683 K and an exceptional TE conversion efficiency of 2.83% at a hot-side temperature of 723 K. Significant zT and conversion efficiency improvements are mainly due to domain density engineering facilitated by an effective hot-pressing technique applied to lightly doped GeTe. The In–GeTe alloy exhibits superior TE properties and demonstrates notable stability under significant thermal gradients, highlighting its promise for use in mid-temperature TE energy generation systems.