Abstract
In this work, low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with sequential lateral solidification (SLS) laser annealing process were fabricated. The grain boundaries (GB) can be well-controlled to avoid the channel area, so that the device mobility is created enhanced. The device performance and reliability between oxide-nitride-oxide (ONO) stacked gate dielectric devices and conventional SiO 2 devices have been measured and analyzed under AC stress conditions. These results indicate that LTPS TFTs with ONO structure exhibit better reliability characteristics than conventional ones. A TFT metal-oxide-nitride-oxide-silicon (MONOS) memory device is also investigated. This MONOS device is a promising embedded non-volatile memory candidate to reduce power consumption for mobile applications. ©2006 The Japan Society of Applied Physics.