Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

Wei-Cheng Lin; Tsung-Chien Wu; Yi-Hung Tsai; Long-Jei Du; Ya-Chin King

doi:10.1109/TED.2005.850639

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Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

Journal article

Peer reviewed

Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

Wei-Cheng Lin, Tsung-Chien Wu, Yi-Hung Tsai, Long-Jei Du and Ya-Chin King

IEEE Transactions on Electron Devices, Vol.52(7), pp.1478-1483

07/2005

DOI: https://doi.org/10.1109/TED.2005.850639

Abstract

Class-A amplifier

Class-E amplifier

Fowler-Nordheim (FN) stress

Hot-carrier(HC) stress

Reliability

Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation sub-circuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier. © 2005 IEEE.

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Title: Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology
Creators - without role: Wei-Cheng Lin - Microelectronics Laboratory , Semiconductor Technology Application Research Group , Department of Electrical Engineering
Tsung-Chien Wu - Microelectronics Laboratory , Semiconductor Technology Application Research Group , Department of Electrical Engineering
Yi-Hung Tsai - Microelectronics Laboratory , Semiconductor Technology Application Research Group , Department of Electrical Engineering
Long-Jei Du - Microelectronics Laboratory , Semiconductor Technology Application Research Group , Department of Electrical Engineering
Ya-Chin King - Microelectronics Laboratory , Semiconductor Technology Application Research Group , Department of Electrical Engineering
Publication Details: IEEE Transactions on Electron Devices, Vol.52(7), pp.1478-1483
Identifiers: 9957777711206774
Academic Unit: Institute of Electronics Engineering, College of Electrical Engineering and Computer Science, National Tsing Hua University
Language: English
Resource Type: Journal article

Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

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