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Repeated 3D nucleation in electroless Cu deposition and the grain boundary structure involved
Journal article   Peer reviewed

Repeated 3D nucleation in electroless Cu deposition and the grain boundary structure involved

Hong-Hui Hsu, Jien-Wei Yeh and Su-Jien Lin
Journal of the Electrochemical Society, Vol.150(11)
11/2003

Abstract

Agglomerations composed of Cu nanocrystallites are observed in the electroless Cu films deposited on Pd-activated TaN/SiO 2 /Si substrates. They were found to in situ recrystallize as large grains when exposed to the electron-beam of scanning electron microscopy (SEM). This observation not only confirms the self-induced repeated nucleation involved in electroless crystallization, but indicates that low-angle grain boundaries form during repeated nucleation of Cu nuclei in the Cu film. The rotation of Cu nanocrystallites by slipping away the boundary dislocations in low-angle boundaries is responsible for the recrystallization induced by the electron-beam under SEM observation.

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