摘要
Ternary metal oxide-based resistive random access memory (RRAM) is becoming increasingly popular in memory systems owing to its excellent characteristics, such as high switching speed and reliable stability. In this study, dielectric layer PbHfO3 (PHO) films were epitaxially deposited on the SrRuO3 (SRO) bottom electrode, and Au was deposited as the top electrode. PHO shows resistive switching properties, with a uniform distribution of low-resistance state (LRS) and high-resistance state (HRS), and a long retention time (over 104 s). The atomic resolution transmission electron microscope (TEM) and scanning transmission electron microscope (STEM) images demonstrate the structural evolution of PHO before and after switching. Electron energy loss spectroscopy (EELS) and X-ray photoelectron spectroscopy (XPS) further confirmed the resistive switching path. The results demonstrate the exploitability of PHO as a promising RRAM material, while the detailed discussion of its switching behavior provides an aspect of the RRAM switching mechanism.
•The epitaxial growth of PHO and SRO layer is observed at the atomic scale.•The device performance with different orientation, top electrode, and thickness are compared.•The resistive switching behaviors and mechanism in PHO layer are demonstrated.•The reasons resulting in hard breakdown of the device are analyzed.