摘要
Ferroelectric field-effect transistors (Fe-FETs) have emerged as a key technology for next-generation logic computing and non-volatile memory (NVM), offering low-power consumption and multifunctional characteristics. Notably, hafnium zirconium oxide (HZO), a novel fluorite-structured ferroelectric material, demonstrates exceptional scalability, high compatibility with complementary metal-oxide-semiconductor (CMOS) processes, and outstanding material stability. Notably, ultrathin HZO layers (3-5 nm) are well suited for Fe-FET logic devices, whereas thicker HZO films (10-12 nm) are optimal for Fe-FET-based NVM applications. This article systematically reviews recent advances in HZO-based Fe-FETs, covering negative capacitance field-effect transistors (FETs), super-high-k FETs, and Fe-FET NVM applications, while also addressing current challenges. This comprehensive analysis provides technical insights for advancing HZO-based Fe-FET technology.