Abstract
The effect of operation current on the high-resistance state and the endurance for the HfO X -based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high-resistance state of the 1R device after the forming and SET stages is observed. The accelerated degradation of the high-resistance state for the HfO X device undergoing a high-operation-current stage is revealed for the first time. As the compliance current increases beyond 500 muA, the resistance of the high-resistance state of the device deceases drastically. A possible scenario about the correlation between the high-resistance state and the compliance current based on the filament model is proposed. By suppressing the current overshoot with the 1T1R device, the high-resistance state ( 1} M}Omega) and excellent endurance ( 10}-{8} cycles}) for the HfO X resistive memory are demonstrated. © 2006 IEEE.