摘要
The deposition of amorphous indium-zinc oxide (IZO) films by cosputtering from In2 O3 and ZnO targets near room temperature was investigated as a function of power, process pressure and oxygen partial pressures in the sputtering ambient. The resistivity of the films with InZn ratio between 0.3 and 0.6 could be controlled between 10-3 and 103 cm by varying the oxygen partial pressure. The corresponding electron mobilities were 5-20 cm2 V-1 s-1. The optical transmittance of the IZO films was >70% in all cases. Ohmic contact resistances in the range of 3-8× 10-5 cm were obtained with both NiAu and TiAu deposited by electron beam evaporation. ZnO films deposited under the same conditions always showed evidence of polycrystallinity, while the InZnO films remained amorphous. © 2007 The Electrochemical Society.