Abstract
Ferromagnetism above room temperature was observed in Cr-doped hydrogenated amorphous silicon films deposited by rf magnetron sputtering. Structure analysis reveals that films are amorphous without any detectable precipitates up to the solubility limit of 16 at.% Cr. Experimental results suggest that hydrogenation has a dramatic influence on magnetic properties, electrical conductivity, and carrier concentration in the thin films. Pronounced anomalous Hall effect and magnetization curve both suggest that the origin of the ferromagnetism may arise from percolation of magnetic polarons. © 2008 American Institute of Physics.