Abstract
Self-assembled In1-x Mnx As quantum dots (0.19≤x≤0.45) have been grown on GaAs (100) substrates by low-temperature molecular beam epitaxy. The microstructure analysis revealed that the uniformly distributed In1-x Mnx As dots have a zinc blende structure as x≤0.38. Furthermore, all samples exhibit ferromagnetic state at 5 K, and their Curie temperatures range from 260 to 340 K varying with x. These (In, Mn)As quantum dots are promising for room-temperature spintronic devices. © 2007 American Institute of Physics.